GaN Templates
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GaN Templates

Gallium Nitride (GaN) HEMTs (High Electron Mobility Transistors) are the next generation of RF power transistor technology. FineWinwafers now offer AlGaN/GaN HEMT Epi Wafer on sapphire or Silicon.
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Product Description

We can provide 2inch to 8inch GaN template on sapphire substrates and 2inch GaN templates on Silicon substrate.


Specification:

GaN TEMPLATES

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GaN templates si-doped GaN epitaxial wafers semiconductor epiwafer LED wafer semiconductor wafer III-V compounds High Electron Mobility Transistors