Availability: | |
---|---|
3inch
FineWin
Detailed specification:
Item | 3-inch C-plane(0001) 430μm Sapphire Wafers | |
Growth Method | KY | |
Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
Orientation | Cplane (0001)+/- 0.1° or Cplane off Mplane0.2+/- 0.1° | |
Thickness | 500 μm +/- 25 μm or customized | |
Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
Primary Flat Length | 22.0 mm +/- 1.0 mm | |
Front surface | Epi-polished, Ra < 0.2 nm (by AFM) | |
Back surface | Epi-polished, Ra < 0.2 nm (by AFM) | Fine ground, Ra = 0.8 μm to 1.2 μm |
TTV | < 8 μm | |
BOW | < 10 μm | |
WARP | < 15 μm | |
Cleaning | Class 100 cleanroom cleaning and vacuum packaging, | |
Packaging | 25 pieces in one cassette packaging or single piece packaging. |
Application:
Used as the sustrates of GaN epitaxial wafer (GaN Templates), then process LED chips